• DocumentCode
    2671820
  • Title

    Very fast transient simulation and measurement methodology for ESD technology development

  • Author

    Malobabic, Slavica ; Ellis, David F. ; Liou, Juin J. ; Salcedo, Javier A. ; Hajjar, Jean-Jacques ; Zhou, Yuanzhong

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    769
  • Lastpage
    776
  • Abstract
    A Transient safe operating area (TSOA) definition for ESD applications is introduced. Within this concept framework, ESD protection device topologies developed in a mixed-signal submicron high-voltage CMOS technology are studied to identify turn-on voltage and the resulting voltage overshoot conditions during fast ESD transients. A state-of-the-art numerical simulation environment used to study and optimize the fast transient response of ESD protection devices is discussed and simulation results are benchmarked versus very fast transmission line pulsing measurements. Constraints for triggering control of clamp devices are also investigated via simulations and pulse measurements.
  • Keywords
    CMOS integrated circuits; MOSFET; electrostatic discharge; network topology; semiconductor device measurement; semiconductor device models; transient analysis; ESD technology development; TSOA; device topology; measurement methodology; numerical simulation environment; submicron high-voltage CMOS technology; transient safe operating area; transmission line pulsing measurements; triggering control; very fast transient simulation; CMOS technology; Clamps; Electrostatic discharge; Numerical simulation; Power system transients; Protection; Topology; Transient response; Transmission line measurements; Voltage; Field-Induced Charged Device Model (FICDM); First Voltage Impulse (FVI); Technology Computer Aided Design (TCAD); Very Fast Transient;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173347
  • Filename
    5173347