Title :
The Development of High-Power, Low-Frequency PIN Diodes
Author :
Caulton, M. ; Rosen, A. ; Stabile, P. ; Gombar, A.
Abstract :
The application of PIN diodes in high-power systems at frequencies as low as 500 kHz requires the use of diodes with intrinsic layers of long carrier lifetimes, operation at low rf-to-bias current ratios, and large reverse bias voltages. The development of suitable diodes, operating conditions, and test results in actual circuits are described.
Keywords :
Antenna measurements; Charge carrier lifetime; Circuit testing; Conductivity; Diodes; Frequency; Microwave technology; Resistors; Switches; Thickness measurement;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129889
