Title :
Laser measurement techniques for detecting age-related degradation of device radiation response
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
The potential for aging effects in silicon electronics is a concern for systems with prolonged service lives that contain electronics that must function in extreme radiation environments. A set of laser-based diagnostic techniques is described that is used to provide ongoing awareness of changes in the radiation response of aging discrete and integrated circuits.
Keywords :
ageing; elemental semiconductors; measurement by laser beam; radiation hardening (electronics); semiconductor device measurement; semiconductor device reliability; silicon; Si; age-related degradation; integrated circuits; laser measurement technique; laser-based diagnostic technique; semiconductor device radiation response; silicon electronics; Aging; Circuit testing; Current measurement; Current supplies; Degradation; Electronic equipment testing; Laser transitions; Measurement techniques; Radiation detectors; Silicon; Electronics Aging; Laser Testing; Radiation Response;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173350
