Title :
A Study of High Power Pulsed Characteristics of Low-Noise GaAs MESFETS
Author :
Dormer, L. ; James, D.S.
Abstract :
Low-noise GaAs MESFET´S have been investigated for catastrophic burn-out ratings when exposed to representative pulses from an X-band transmitter/T-R cell combination. Also reported are failure analyses, non-catastrophic but recoverable effects and longer term tests.
Keywords :
Circuit testing; Failure analysis; Gallium arsenide; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Pulse amplifiers; Radar; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129890
