Title :
Reliable and accurate temperature measurement using scanning thermal microscopy with double lock-in amplification
Author :
Ho, H.W. ; Zheng, X.H. ; Phang, J.C.H. ; Balk, L.J.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability (CICFAR), Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
A scanning thermal microscopy (SThM) technique incorporating double lock-in amplification is developed to minimize temperature drift and artifacts due to probe-sample contact area. The localized temperature change of an interconnect biased with a switching current supply is measured with improved signal level and a significant reduction of topographic artifacts.
Keywords :
aluminium; interconnections; reliability; scanning tunnelling microscopy; temperature measurement; Al; double lock-in amplification; interconnect; probe-sample contact area; reliability; scanning thermal microscopy; temperature measurement; Current supplies; Failure analysis; Integrated circuit reliability; Microscopy; Power engineering and energy; Probes; Reliability engineering; Surfaces; Temperature measurement; Thermal resistance; double lock-in; localized temperature; scanning thermal microscopy;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173354
