• DocumentCode
    2671985
  • Title

    High frequency transport in bi-layer graphene FET devices

  • Author

    Mahjoub, M. ; Aoki, N. ; Song, J. ; Bird, J.P. ; Ferry, D.K. ; Kawano, Y. ; Ishibashi, K. ; Ochiai, Y.

  • Author_Institution
    GS-AIS, Chiba Univ., Chiba, Japan
  • fYear
    2011
  • fDate
    2-7 Oct. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In order to study on THz radiation pick upping by use of graphene nano-structures, we explore the use of quantum dot as nano scale GHz-THz detector with a high sensitive and/or a wide range frequency response. A fundamental possibility in the device application has been studied.
  • Keywords
    graphene; microwave field effect transistors; quantum dots; terahertz wave detectors; C; THz radiation; bilayer graphene FET devices; frequency response; graphene nanostructures; high frequency transport; nanoscale GHz-THz detector; quantum dot; Electromagnetic heating; Frequency measurement; Microwave FETs; Microwave measurements; Performance evaluation; Radiation effects; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
  • Conference_Location
    Houston, TX
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4577-0510-6
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/irmmw-THz.2011.6104877
  • Filename
    6104877
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2671985