Title :
The characteristics of Cu-drift induced dielectric breakdown under alternating polarity bias temperature stress
Author :
Jung, Sung-Yup ; Kim, Byoung-Joon ; Lee, Nam Yeal ; Kim, Baek-Mann ; Yeom, Seung Jin ; Kwak, Noh Jung ; Joo, Young-Chang
Author_Institution :
Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
Cu ion migration mechanism was investigated in damascene Cu/SiO2 interconnects. Cu backward migration was investigated by AC TDDB test. When AC is applied, the Cu migration cannot be recovered completely because the direction of diffusion flux and drift flux is opposite. Therefore, lifetime of AC TDDB is slightly larger than that of DC TDDB.
Keywords :
copper; electric breakdown; integrated circuit interconnections; silicon compounds; stress analysis; AC TDDB test; Cu-SiO2; diffusion flux; drift flux; drift induced dielectric breakdown; ion migration mechanism; polarity bias temperature stress; time dependent dielectric breakdown; Copper; Dielectric breakdown; Electrodes; Leakage current; Metal-insulator structures; Performance evaluation; Stress; Temperature; Testing; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173359
