Title :
Process options for improving electromigration performance in 32nm technology and beyond
Author :
Aubel, O. ; Hohage, J. ; Feustel, F. ; Hennesthal, C. ; Mayer, U. ; Preusse, A. ; Nopper, M. ; Lehr, M.U. ; Boemmels, J. ; Wehner, S.
Author_Institution :
Quality & Reliability, AMD Fab36 LLC & Co. KG, Dresden, Germany
Abstract :
In this paper we present process options to close the gap between electromigration performance needs by design and process performance. We are going to present reliability data for metal capping and advanced copper surface cleaning processes. These processes are showing very good performance and extendibility to 32 nm technology nodes and beyond.
Keywords :
copper; electromigration; integrated circuit interconnections; integrated circuit reliability; surface cleaning; Cu; copper surface cleaning process; electromigration performance; metal capping; reliability data; size 32 nm; Alloying; Copper; Degradation; Dielectrics; Electric breakdown; Electromigration; Electrons; Reliability engineering; Surface cleaning; Surface resistance; ILD breakdown strength; electromigration; interface engineering; metal capping;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173361
