Title :
1700V Si-IGBT and SiC-SBD hybrid module for AC690V inverter system
Author :
Danyi Xiang ; Song Chen ; Haining Wang ; Ikawa, O. ; Miyashita, S. ; Nishimura, T. ; Igarashi, Seiki ; Fujihira, T.
Author_Institution :
Applic. Eng. Dept., Fuji Electric Co., Ltd., Shanghai, China
Abstract :
The 1700V/400A hybrid module is consisted of Si-IGBTs and SiC-SBDs mounted in a general 2in1 package. Because the reverse recovery current of SiC-SBD is very small to be an unipolar device, reverse recovery and turn-on losses at 400A on the hybrid module are 83% and 38% lower than that of the conventional all Si module, respectively. Therefore there is a further advantage of hybrid module at high frequency operation. Radiation noise on hybrid module becomes higher with increasing collector current, but the peak value of the noise from hybrid module is almost same as the all Si module if the collector current is less than 300A. In AC690V PWM inverter, the total power dissipation of hybrid module is 8% lower at 1 kHz and 29% lower at 10 kHz compare to the all Si module. Therefore the 1700V hybrid module is useful as a power module for an AC690V high efficiency inverter system such as wind power generation system and high voltage solar power generation system. This paper reports about the static and dynamic characteristics and the radiation noise measurement results on the 400A/1700V hybrid module.
Keywords :
PWM invertors; Schottky diodes; elemental semiconductors; insulated gate bipolar transistors; modules; silicon; silicon compounds; wide band gap semiconductors; IGBT; PWM inverter system; SBD; Schottky barrier diode; Si; SiC; collector current; current 400 A; hybrid module; insulated gate bipolar transistor; power dissipation; power module; pulse width modulated inverter; radiation noise measurement; reverse recovery current; solar power generation system; turn-on loss; unipolar device; voltage 1700 V; voltage 690 V; wind power generation system; Frequency modulation; Hybrid power systems; Insulated gate bipolar transistors; Inverters; Silicon; Silicon carbide; Switches; 1700V hybrid module; FFT; SiC-SBD; radiation noise;
Conference_Titel :
Electronics and Application Conference and Exposition (PEAC), 2014 International
Conference_Location :
Shanghai
DOI :
10.1109/PEAC.2014.7037835