DocumentCode
2672115
Title
Effect of multiple via layout on electromigration performance and current density distribution in copper interconnect
Author
Lin, Mingte ; Jou, Nick ; Liang, James W. ; Su, K.C.
Author_Institution
United Microelectron. Corp., Hsinchu, Taiwan
fYear
2009
fDate
26-30 April 2009
Firstpage
844
Lastpage
847
Abstract
Downstream Electromigration (EM) was studied on different multiple via structures. Structures with more via gained better EM performance improvement. Failure analysis showed different EM failure modes on these structures. Finite element analysis is applied to find out the current density profiles and their variation between these structures. Resistance increases due to EM induced void are also simulated and found to be dependent on size and location of void. The different EM results of these multiple via structures are explained with the current density results and the different diffusion patterns found.
Keywords
diffusion; electromigration; failure analysis; finite element analysis; integrated circuit interconnections; copper interconnect; current density distribution; current density profiles; diffusion patterns; electromigration; failure analysis; finite element analysis; Copper; Current density; Electromigration; Failure analysis; Finite element methods; Microelectronics; Performance evaluation; Stress; Testing; Very large scale integration; copper; current; electromigration; interconnect; via;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173363
Filename
5173363
Link To Document