• DocumentCode
    2672115
  • Title

    Effect of multiple via layout on electromigration performance and current density distribution in copper interconnect

  • Author

    Lin, Mingte ; Jou, Nick ; Liang, James W. ; Su, K.C.

  • Author_Institution
    United Microelectron. Corp., Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    844
  • Lastpage
    847
  • Abstract
    Downstream Electromigration (EM) was studied on different multiple via structures. Structures with more via gained better EM performance improvement. Failure analysis showed different EM failure modes on these structures. Finite element analysis is applied to find out the current density profiles and their variation between these structures. Resistance increases due to EM induced void are also simulated and found to be dependent on size and location of void. The different EM results of these multiple via structures are explained with the current density results and the different diffusion patterns found.
  • Keywords
    diffusion; electromigration; failure analysis; finite element analysis; integrated circuit interconnections; copper interconnect; current density distribution; current density profiles; diffusion patterns; electromigration; failure analysis; finite element analysis; Copper; Current density; Electromigration; Failure analysis; Finite element methods; Microelectronics; Performance evaluation; Stress; Testing; Very large scale integration; copper; current; electromigration; interconnect; via;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173363
  • Filename
    5173363