Title :
The dynamic thermal behavior of silicided polysilicon under hight current stress event
Author :
Lee, Jian-Hsing ; Shih, J.R. ; David-Su ; Wu, Kenneth
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
Abstract :
A simple dynamic thermal model considering Joule-heating, heat-conduction and energy conservation has been developed. It fits the dynamic thermal behavior of the silicided polysilicon under the high current stress event very well. The criterion to induce the DC resistance change of a silicided polysilicon resistor is determined by the phase transform temperature (PTT) of the silicide polysilicon.
Keywords :
resistors; stress analysis; thermal analysis; DC resistance; Joule-heating; dynamic thermal behavior model; energy conservation; heat-conduction; high current stress event; phase transform temperature; silicided polysilicon resistor; CMOS technology; Current measurement; Energy conservation; Probes; Pulse measurements; Resistors; Silicides; Testing; Thermal stresses; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173367
