• DocumentCode
    2672175
  • Title

    Temperature scaling of electromigration threshold product in Cu/low-K interconnects

  • Author

    Petitprez, E. ; Doyen, L. ; Ney, D.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    865
  • Lastpage
    868
  • Abstract
    In this paper, we report on the temperature dependence of electromigration threshold product in copper interconnects. The electromigration threshold product (jL)c is first determined from lifetime distributions for temperatures ranging from 260degC to 330degC. We then propose an alternative method to determine (jL)c at much lower temperatures. We show that the threshold product does not vary significantly in the investigated temperature range. We demonstrate this alternative method is suitable to determine (jL)c close to the final product operating temperature, which would require unrealistic test duration if performed with a conventional method based on lifetime data.
  • Keywords
    copper; electromigration; integrated circuit interconnections; temperature distribution; temperature scales; Blech effect; Cu; copper-low-K interconnect; electromigration threshold product; integrated circuit; lifetime temperature distribution; temperature 260 degC to 330 degC; temperature scale; Copper; Current density; Degradation; Electromigration; Integrated circuit interconnections; Life estimation; Life testing; Performance evaluation; Temperature dependence; Temperature distribution; Blech effect; Copper; drift velocity; electromigration; interconnect; threshold product;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173368
  • Filename
    5173368