DocumentCode
2672175
Title
Temperature scaling of electromigration threshold product in Cu/low-K interconnects
Author
Petitprez, E. ; Doyen, L. ; Ney, D.
Author_Institution
STMicroelectronics, Crolles, France
fYear
2009
fDate
26-30 April 2009
Firstpage
865
Lastpage
868
Abstract
In this paper, we report on the temperature dependence of electromigration threshold product in copper interconnects. The electromigration threshold product (jL)c is first determined from lifetime distributions for temperatures ranging from 260degC to 330degC. We then propose an alternative method to determine (jL)c at much lower temperatures. We show that the threshold product does not vary significantly in the investigated temperature range. We demonstrate this alternative method is suitable to determine (jL)c close to the final product operating temperature, which would require unrealistic test duration if performed with a conventional method based on lifetime data.
Keywords
copper; electromigration; integrated circuit interconnections; temperature distribution; temperature scales; Blech effect; Cu; copper-low-K interconnect; electromigration threshold product; integrated circuit; lifetime temperature distribution; temperature 260 degC to 330 degC; temperature scale; Copper; Current density; Degradation; Electromigration; Integrated circuit interconnections; Life estimation; Life testing; Performance evaluation; Temperature dependence; Temperature distribution; Blech effect; Copper; drift velocity; electromigration; interconnect; threshold product;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173368
Filename
5173368
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