DocumentCode :
2672175
Title :
Temperature scaling of electromigration threshold product in Cu/low-K interconnects
Author :
Petitprez, E. ; Doyen, L. ; Ney, D.
Author_Institution :
STMicroelectronics, Crolles, France
fYear :
2009
fDate :
26-30 April 2009
Firstpage :
865
Lastpage :
868
Abstract :
In this paper, we report on the temperature dependence of electromigration threshold product in copper interconnects. The electromigration threshold product (jL)c is first determined from lifetime distributions for temperatures ranging from 260degC to 330degC. We then propose an alternative method to determine (jL)c at much lower temperatures. We show that the threshold product does not vary significantly in the investigated temperature range. We demonstrate this alternative method is suitable to determine (jL)c close to the final product operating temperature, which would require unrealistic test duration if performed with a conventional method based on lifetime data.
Keywords :
copper; electromigration; integrated circuit interconnections; temperature distribution; temperature scales; Blech effect; Cu; copper-low-K interconnect; electromigration threshold product; integrated circuit; lifetime temperature distribution; temperature 260 degC to 330 degC; temperature scale; Copper; Current density; Degradation; Electromigration; Integrated circuit interconnections; Life estimation; Life testing; Performance evaluation; Temperature dependence; Temperature distribution; Blech effect; Copper; drift velocity; electromigration; interconnect; threshold product;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
ISSN :
1541-7026
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2009.5173368
Filename :
5173368
Link To Document :
بازگشت