DocumentCode
2672236
Title
Subpicosecond luminescence spectroscopy of hot carrier dynamics in homoepitaxial GaN
Author
Garrett, G.A. ; Rudin, S. ; Sampath, A.V. ; Collins, C.J. ; Shen, H. ; Wraback, M.
Author_Institution
US Army Res. Lab., Adelphi, MD, USA
fYear
2003
fDate
6-6 June 2003
Abstract
Femtosecond UV luminescence downconversion is used to study hot carrier relaxation in homoepitaxial GaN through measurement of PL rise times for varying carrier excitation energies and densities.
Keywords
II-VI semiconductors; carrier density; carrier relaxation time; gallium compounds; high-speed optical techniques; photoluminescence; semiconductor epitaxial layers; ultraviolet spectra; wide band gap semiconductors; GaN; carrier excitation densities; carrier excitation energies; femtosecond UV luminescence downconversion; homoepitaxial GaN; hot carrier dynamics; hot carrier relaxation; photoluminescence; subpicosecond luminescence spectroscopy; Gallium nitride; Hot carriers; Luminescence; Nonlinear optics; Optical mixing; Optical pulses; Optical pumping; Optical sensors; Spectroscopy; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-749-0
Type
conf
DOI
10.1109/QELS.2003.238213
Filename
1276419
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