• DocumentCode
    2672249
  • Title

    A 1.75 - 6 GHz Miniaturized GaAs FET Amplifier Using Quasi-Lumped Element Impedance Matching Networks

  • Author

    Moghe, S.B. ; Gray, R.E. ; Tsai, W.C.

  • fYear
    1981
  • fDate
    15-19 June 1981
  • Firstpage
    316
  • Lastpage
    318
  • Abstract
    A quasi-lumped element impedance matching technique was developed for a multi-octave bandwidth FET amplifier. The lumped elements were realized by parallel capacitors, high impedance band wires and etched lines on a 0.170 x 0.085 x 0.010 inch alumina substrate. A two-stage amplifier has been constructed using this method and yields 17/spl plusmn/ dB gain and 3.5 dB maximum noise figure over 1.75 to 6.0 GHz band.
  • Keywords
    Bandwidth; Broadband amplifiers; Circuit synthesis; Etching; Flexible printed circuits; Gallium arsenide; Impedance matching; MOS capacitors; Microwave FETs; Noise figure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1981 IEEE MTT-S International
  • Conference_Location
    Los Angeles, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1981.1129910
  • Filename
    1129910
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2672249