Title :
A 1.75 - 6 GHz Miniaturized GaAs FET Amplifier Using Quasi-Lumped Element Impedance Matching Networks
Author :
Moghe, S.B. ; Gray, R.E. ; Tsai, W.C.
Abstract :
A quasi-lumped element impedance matching technique was developed for a multi-octave bandwidth FET amplifier. The lumped elements were realized by parallel capacitors, high impedance band wires and etched lines on a 0.170 x 0.085 x 0.010 inch alumina substrate. A two-stage amplifier has been constructed using this method and yields 17/spl plusmn/ dB gain and 3.5 dB maximum noise figure over 1.75 to 6.0 GHz band.
Keywords :
Bandwidth; Broadband amplifiers; Circuit synthesis; Etching; Flexible printed circuits; Gallium arsenide; Impedance matching; MOS capacitors; Microwave FETs; Noise figure;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129910
