DocumentCode
2672251
Title
Femtosecond intersubband dynamics of electrons in AlGaN/GaN high-electron-mobility transistors
Author
Wang, Z. ; Reimann, K. ; Woerner, M. ; Elsaesser, T. ; Hofstetter, D. ; Hwang, J. ; Schaff, W.J. ; Eastman, L.F.
Author_Institution
Max-Born-Inst. fur Nichtlineare Optik und Kurzzeitspektroslopie, Berlin, Germany
fYear
2003
fDate
6-6 June 2003
Abstract
Ultrafast electron dynamics in the inversion layer of an AlGaN/GaN transistor is studied in pump-probe experiments with 50-fs midinfrared pulses, e1-e2 intersubband scattering and thermalization occur within 200 fs.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; time resolved spectra; wide band gap semiconductors; 200 fs; 50 fs; AlGaN-GaN; e1-e2 intersubband scattering; femtosecond intersubband dynamics; high-electron-mobility transistors; midinfrared pulses; pump-probe experiments; thermalization; ultrafast electron dynamics; Absorption; Aluminum gallium nitride; Electrons; Gallium nitride; HEMTs; MODFETs; Optical pulses; Optical scattering; Probes; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-749-0
Type
conf
DOI
10.1109/QELS.2003.238214
Filename
1276420
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