Title :
A 30 GHz - 100 mW GaAs FET
Author :
Ishihara, O. ; Kadowaki, Y. ; Nakatani, M. ; Nara, A. ; Shirahata, K.
Abstract :
Power output of 100 mW and linear power gain of 5 dB have been realized at 30 GHz for the GaAs FET fabricated by optimizing physical parameters of the channel for high power end.
Keywords :
Circuits; FETs; Fasteners; Gain; Gallium arsenide; Microstrip; Performance evaluation; Power measurement; Semiconductor device measurement; Tuners;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129913
