DocumentCode
2672291
Title
A 30 GHz - 100 mW GaAs FET
Author
Ishihara, O. ; Kadowaki, Y. ; Nakatani, M. ; Nara, A. ; Shirahata, K.
fYear
1981
fDate
15-19 June 1981
Firstpage
325
Lastpage
327
Abstract
Power output of 100 mW and linear power gain of 5 dB have been realized at 30 GHz for the GaAs FET fabricated by optimizing physical parameters of the channel for high power end.
Keywords
Circuits; FETs; Fasteners; Gain; Gallium arsenide; Microstrip; Performance evaluation; Power measurement; Semiconductor device measurement; Tuners;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location
Los Angeles, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1981.1129913
Filename
1129913
Link To Document