Post-cycling data retention failure in multilevel nor flash memory with nitrided tunnel-oxide

Author

Lee, Wook H. ; Hur, Chang-Hyun ; Lee, Hyun-Min ; Yoo, Hwanbae ; Lee, Sang-Eun ; Lee, Bong-Yong ; Park, Chankwang ; Kim, KiJoon

Author_Institution

Memory Div., Samsung Electron., Yongin, South Korea

fYear

2009

fDate

26-30 April 2009

Firstpage

907

Lastpage

908

Abstract

Post-cycling data retention characteristics of a multilevel NOR flash memory with nitrided tunnel-oxide is presented. Results show that retention behavior is strongly related to the amount of interface trap generation rather than that of oxide trap, indicating detrapping from near interface trap is a major factor for threshold voltage shift. Process conditions including nitrogen concentration at the interface and subsequent annealing of nitrided tunnel-oxide by O₂ are found to be related to the generation of interface trap and resultant postcycling retention.

Keywords

NOR circuits; flash memories; annealing; interface trap generation; multilevel NOR flash memory; nitrided tunnel-oxide; nitrogen concentration; postcycling data retention failure; process conditions; threshold voltage shift; Annealing; Character generation; Distortion measurement; Electron traps; Flash memory; Interference; Nitrogen; Threshold voltage; Transconductance; Voltage control; Endurance; Interface Trap; MLC; NOR flash; Retention;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173377

Filename

5173377