Title :
Reliability of HFO2/SIO2 dielectric with strain engineering using CESL stressor
Author :
Kim, Jae Chul ; Lee, Kyong Taek ; Song, Seung Hyun ; Park, Min Sang ; Hong, Seung Ho ; Choi, Gil Bok ; Choi, Hyun Sik ; Baek, Rock Hyun ; Sagong, Hyun Chul ; Jeong, Yoon-Ha ; Jung, Sung Woo ; Kang, Chang Young
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Abstract :
We have investigated reliability characteristics for a high-k/metal gate MOSFET with strain engineering under constant voltage stress (CVS). Using contact edge stop layer (CESL), tensile and compressive strains are applied to the channel region. Since the compressive MOSFET has more hydrogen in the CESL, the MOSFET has lower reliability characteristics than others. Though the hydrogen can passivate dangling bonds in the high-k dielectric, the passivated bonds are easily broken by voltage stress, which cause degradation of high-k layer.
Keywords :
MOSFET; hafnium compounds; high-k dielectric thin films; passivation; semiconductor device reliability; silicon compounds; stress analysis; HFO2-SiO2; channel region; compressive strains; contact edge stop layer; dangling bonds; high-k-metal gate MOSFET; hydrogen passivation; reliability characteristics; strain engineering; tensile strains; voltage stress; Capacitive sensors; Compressive stress; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hydrogen; MOSFET circuits; Reliability engineering; Tensile stress; Voltage; Breakdown; CESL; HfO2; Reliability; SILC; Strain engineering; TDDB; TZDB; component;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173380
