Title :
Millimeter-Wave Silicon IMPATT Sources and Combiners for the 110-260 GHz Range
Author :
Kai Chang ; Thrower, F. ; Hayashibara, G.M.
Abstract :
This paper reports the recent progress in CW and pulsed silicon IMPATT sources in the 110-260 GHz frequency range. A bridged double-quartz-standoff package has been developed and successfully used for the entire frequency range. Power combiners at center frequencies of 140 and 217 GHz have also been developed with peak output power of 9.2 and 1 W respectively.
Keywords :
Circuits; Diodes; Doping profiles; Fabrication; Frequency; Gold; Impedance; Packaging; Power generation; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129919