DocumentCode :
2672355
Title :
Millimeter-Wave Silicon IMPATT Sources and Combiners for the 110-260 GHz Range
Author :
Kai Chang ; Thrower, F. ; Hayashibara, G.M.
fYear :
1981
fDate :
15-19 June 1981
Firstpage :
344
Lastpage :
346
Abstract :
This paper reports the recent progress in CW and pulsed silicon IMPATT sources in the 110-260 GHz frequency range. A bridged double-quartz-standoff package has been developed and successfully used for the entire frequency range. Power combiners at center frequencies of 140 and 217 GHz have also been developed with peak output power of 9.2 and 1 W respectively.
Keywords :
Circuits; Diodes; Doping profiles; Fabrication; Frequency; Gold; Impedance; Packaging; Power generation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1981.1129919
Filename :
1129919
Link To Document :
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