Title :
Chip Level IMPATT Combining at 40 GHz
Author :
Rucker, C.T. ; Amoss, J.W. ; Hill, G.N.
Abstract :
Results with series and series-parallel connections of CW40 GHz GaAs IMPATT diodes are discussed. The multichip geometries utilize Raytheon CW double-drift device chips and are essentially scaled versions of successful X-band geometries reported previously. Maximum series combining efficiency of 82 percent has been achieved.
Keywords :
Capacitors; Circuits; Degradation; Diodes; Fixtures; Frequency; Gallium arsenide; Geometry; Impedance; Testing;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129920
