Title :
A Planar-Type Low-Noise GaAs Monolithic Microwave Amplifier
Author :
Deng Xian-can ; Zhu Guo-liang
Abstract :
A planar low noise amplifier has been fabricated by selectively implanting oxygen to define the active devices. Noise figure 2.5 dB with associated gain of 7dB over the frequency range 4.8-5.3 GHz has been obtained.
Keywords :
Buffer layers; Circuits; FETs; Fabrication; Gallium arsenide; Low-noise amplifiers; MMICs; Microwave amplifiers; Microwave devices; Semiconductor device noise;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129925
