Title :
Performance analysis of package parasitic inductances for fast switching MOSFET in converter
Author :
Ken King-Man Siu ; Cheung, Martin Kin-Ho ; Stuckler, Franz Peter
Author_Institution :
PMM High Power Applic. Center, Infineon Technol. Hong Kong Ltd., Hong Kong, China
Abstract :
This paper analyzes the influence of package parasitic inductance of fast switching MOSFET in the transient operation. It is found that in the traditional common source MOSFET packages, the inductor in the source connection pin limits the switching speed and reduces the system stability by the gate oscillation. Therefore a package using separated connection for gate control of fast switching MOSFET is proposed. By separated the source connection between the power path and the driver path, the switching loss and the gate oscillation of MOSFET generated by package parasitic source inductor can be minimized. The effectiveness of the separated source package verifies in a boost PFC converter with the efficiency measurement and the switching waveforms.
Keywords :
MOSFET; circuit stability; inductance; inductors; losses; power factor correction; semiconductor device packaging; switching convertors; boost PFC converter; common source MOSFET packages; driver path; fast switching MOSFET; gate control; gate oscillation; package parasitic inductances; package parasitic source inductor; performance analysis; power factor correction; power path; source connection pin separation; switching loss; switching speed; switching waveform measurement efficiency; system stability reduction; transient operation; Inductors; Logic gates; MOSFET; Oscillators; Semiconductor device modeling; Switches; Transient analysis; Package parasitic inductances; efficiency; switching transient overshoot;
Conference_Titel :
Electronics and Application Conference and Exposition (PEAC), 2014 International
Conference_Location :
Shanghai
DOI :
10.1109/PEAC.2014.7037874
