Title :
A Comparison Between Actively and Passively Matched S-Band GaAs Monolithic FET Amplifiers
Author :
Pengelly, R.S. ; Suffolk, J.R. ; Cockrlll, J.R. ; Turner, J.A.
Abstract :
The ability to design monolithic GaAs circuits which are insensitive to active and passive component variations is demonstrated. Actively and passively matched monolithic S-band amplifiers are compared in terms of reproducibility, GaAs usage, power consumption and processing complexity.
Keywords :
Circuit noise; Conducting materials; Energy consumption; FETs; Frequency; Gain; Gallium arsenide; Noise figure; Phased arrays; Preamplifiers;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129928
