Accelerated lifetime testing and failure analysis of quartz based GaAs planar Schottky diodes

Author

Lin, R. ; Mehdi, I. ; Pease, A. ; Dengler, R. ; Humphrey, D. ; Lee, T. ; Scherer, A. ; Kayali, S.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

1997

fDate

35715

Firstpage

19

Lastpage

39

Abstract

Accelerated lifetime tests have been performed on integrated planar GaAs Schottky diodes that were bonded to quartz substrates upside-down with a heat-cured epoxy. Results at 175°C, 200°C, and 240°C were analyzed using the Arrhenius-lognormal model. These tests predict a room temperature MTTF of 3×10⁸ hours, a value that is comparable to conventional high-frequency planar Schottky diodes. This result demonstrates that the use of an appropriate epoxy to obtain GaAs devices on quartz substrates does not significantly reduce the lifetime of the devices

Keywords

III-V semiconductors; Schottky diodes; failure analysis; gallium arsenide; life testing; quartz; semiconductor device reliability; semiconductor device testing; 175 C; 200 C; 240 C; Arrhenius-lognormal model; GaAs; MTTF; QUID; SiO₂; accelerated lifetime testing; failure analysis; heat-cured epoxy bonding; high-frequency GaAs planar Schottky diode; quartz substrate; up-side-down integrated device; Bonding; Circuit testing; Failure analysis; Gallium arsenide; Life estimation; Life testing; Schottky diodes; Semiconductor diodes; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1997., Proceedings

Conference_Location

Anaheim, CA

Print_ISBN

0-7908-0064-0

Type

conf

DOI

10.1109/GAASRW.1997.656117

Filename

656117