Title :
Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2
Author :
Jung, Hyung-Suk ; Park, Tae Joo ; Kim, Jeong Hwan ; Lee, Sang Young ; Lee, Joohwi ; Oh, Him Chan ; Na, Kwang Duck ; Park, Jung-Min ; Kim, Weon-Hong ; Song, Min-Woo ; Lee, Nae-In ; Hwang, Cheol Seong
Author_Institution :
Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
HfO2, HfZrxOy and ZrO2 gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO2, ZrO2 exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO2 content increases, Vth shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies.
Keywords :
MOSFET; hafnium compounds; high-k dielectric thin films; zirconium compounds; HfO2; HfZrxOy; ZrO2; bias temperature instability; capacitance; high-k gate dielectrics; nMOS mobility characteristics; pMOS; Crystallization; Hafnium oxide; Interface states; MOS devices; MOSFET circuits; Niobium compounds; Plasma temperature; Stress; Titanium compounds; Zirconium;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173392
