Title :
Applying the universal recovery equation for fast wafer level reliability monitoring NBTI assessment
Author :
Vollertsen, R.-P. ; Reisinger, H. ; Aresu, S. ; Schlünder, C.
Author_Institution :
Infineon Technol. AG, IFAG ETS RPA REL, Munich, Germany
Abstract :
This work demonstrates that NBTI assessment by fast wafer level reliability methods is possible in a quantitative manner. This involves excluding time periods from the stress time that are used for restoration of damage recovered during stress interruption and a calibrated back extrapolation of measured recovery traces to short delay times based on the universal recovery equation. The development of the methodology, the challenges and the verification of the implemented algorithm are presented.
Keywords :
CMOS integrated circuits; extrapolation; integrated circuit reliability; integrated circuit testing; CMOS technology; NBTI; calibrated back extrapolation; damage restoration; universal recovery equation; wafer level reliability; Degradation; Delay; Equations; Monitoring; Niobium compounds; Plasma temperature; Stress measurement; Testing; Thermal stresses; Titanium compounds; NBTI; PFET reliability; SIS; Vt measurement; fWLR; recovery; test methods; universal revovery equation;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173395