RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature

Author

Sagong, Hyun Chul ; Lee, Kyong Taek ; Hong, Seung-Ho ; Choi, Hyun-Sik ; Choi, Gil-Bok ; Baek, Rock-Hyun ; Song, Seung-Hyun ; Park, Min-Sang ; Kim, Jae Chul ; Jeong, Yoon-Ha ; Jung, Sung-Woo ; Kang, Chang Yong

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

fYear

2009

fDate

26-30 April 2009

Firstpage

992

Lastpage

995

Abstract

We investigate RF performances and hot carrier effects of nMOSFETs at cryogenic temperature. RF performances of HfO₂ dielectric nMOSFET at 77 K are improved more than those of SiO₂ dielectric nMOSFET although DC performances are improved similarly. The nMOSFET with HfO₂ dielectric has 127.4 GHz f_T and 75.4 GHz f_max at 77 K. In hot carrier injection measurement, g_m of HfO₂ nMOSFET at 77 K is degraded more than 300 K although V_th shift is less. The cause of g_m reduction is discussed related to the trapping.

Keywords

MOSFET; cryogenic electronics; hafnium compounds; high-k dielectric thin films; hot carriers; semiconductor device measurement; HfO₂; RF performance; cryogenic temperature; frequency 127.4 GHz; frequency 75.4 GHz; hot carrier injection measurement; metal gate-high-k dielectric nMOSFET; temperature 77 K; Cryogenics; Degradation; Dielectric measurements; Hafnium oxide; High-K gate dielectrics; Hot carrier effects; Hot carrier injection; MOSFETs; Radio frequency; Temperature; HfO2; RF; cryogenic; high-k; hot carrier effect; low temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173397

Filename

5173397