Positive and negative bias temperature instability in La2O3 and Al2O3 capped high-k MOSFETs

Author

Aoulaiche, M. ; Kaczer, B. ; Cho, M. ; Houssa, M. ; Degraeve, R. ; Kauerauf, T. ; Akheyar, A. ; Schram, T. ; Roussel, Ph ; Maes, H.E. ; Hoffmann, T. ; Biesemans, S. ; Groeseneken, G.

Author_Institution

IMEC, Leuven, Belgium

fYear

2009

fDate

26-30 April 2009

Firstpage

1014

Lastpage

1018

Abstract

PBTI and NBTI reliability is investigated on La₂O₃ and Al₂O₃ capped n and pMOSFETs, respectively. Low V_th devices are achieved using the capping layers without degrading BTI reliability. For the Al₂O₃ capped pMOSFETs no additional defects related to the capping are observed. The La₂O₃ capping layer for nMOSFETs induces shallow traps, which however are not critical at operating conditions.

Keywords

MOSFET; alumina; dielectric materials; lanthanum compounds; semiconductor device reliability; Al₂O₃; La₂O₃; NBTI reliability; PBTI; capping layer; high-k MOSFET; negative bias temperature instability; positive bias temperature instability; Aluminum oxide; Charge pumps; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Negative bias temperature instability; Niobium compounds; Physics; Titanium compounds; Al2O3; La2O3; NBTI; PBTI; capped MOSFETs; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173402

Filename

5173402