DocumentCode :
2672689
Title :
Positive and negative bias temperature instability in La2O3 and Al2O3 capped high-k MOSFETs
Author :
Aoulaiche, M. ; Kaczer, B. ; Cho, M. ; Houssa, M. ; Degraeve, R. ; Kauerauf, T. ; Akheyar, A. ; Schram, T. ; Roussel, Ph ; Maes, H.E. ; Hoffmann, T. ; Biesemans, S. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2009
fDate :
26-30 April 2009
Firstpage :
1014
Lastpage :
1018
Abstract :
PBTI and NBTI reliability is investigated on La2O3 and Al2O3 capped n and pMOSFETs, respectively. Low Vth devices are achieved using the capping layers without degrading BTI reliability. For the Al2O3 capped pMOSFETs no additional defects related to the capping are observed. The La2O3 capping layer for nMOSFETs induces shallow traps, which however are not critical at operating conditions.
Keywords :
MOSFET; alumina; dielectric materials; lanthanum compounds; semiconductor device reliability; Al2O3; La2O3; NBTI reliability; PBTI; capping layer; high-k MOSFET; negative bias temperature instability; positive bias temperature instability; Aluminum oxide; Charge pumps; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Negative bias temperature instability; Niobium compounds; Physics; Titanium compounds; Al2O3; La2O3; NBTI; PBTI; capped MOSFETs; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
ISSN :
1541-7026
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2009.5173402
Filename :
5173402
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2672689
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