Title :
Effect of mechanical strain on the NBTI of short-channel p-MOSFETS: Role of impactionization
Author :
Teo, Q. ; Ang, D.S. ; See, K.S. ; Yang, P.Z.
Author_Institution :
Sch. of Electr. Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The effect of mechanical strain (MS) and channel length reduction (CLR) on the NBTI of the ultra-thin SiO2 (28 Aring) gate p-MOSFET is investigated. Results show that for effective gate stress voltage |Vg - Vth| below the threshold of impact ionization (II), MS and CLR have negligible impact on NBTI. On the other hand, for |Vg - Vth| approaching and exceeding the II threshold, stress induced degradation (threshold voltage shift |DeltaVth|) exhibits increased sensitivity on MS and CLR, i.e. compressive-strained and short-channel devices exhibit a significant increase in |DeltaVth|. This new observation is able to resolve conflicting reports regarding the effect of MS and CLR on NBTI.
Keywords :
MOSFET; radiation hardening (electronics); silicon compounds; thermal stability; NBTI; SiO2; channel length reduction; gate stress voltage; impact ionization; mechanical strain; short-channel p-MOSFET; stress-induced degradation; Capacitive sensors; Compressive stress; Impact ionization; MOSFET circuits; Niobium compounds; Silicon compounds; Tensile strain; Threshold voltage; Titanium compounds; Transconductance; Channel Length Reduction (CLR); Compressive; Impact ionization (II); Mechanical Strained (MS); Negative Bias Temperature Instability (NBTI); Tensile;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173403
