Title :
Extraordinary carrier multiplication in GaAs MQWs induced by intense terahertz pulse
Author :
Hirori, H. ; Shinokita, K. ; Shirai, M. ; Tani, S. ; Kadoya, Y. ; Tanaka, K.
Author_Institution :
Inst. for Integrated Cell-Mater. Sci., Kyoto Univ., Kyoto, Japan
Abstract :
We report on the extraordinary carrier multiplication phenomena of GaAs quantum wells under only intense terahertz (THz) pulse irradiation. The intensity of exciton luminescence is enhanced more than about 103 times with an increase of the electric field amplitude of the THz pulse from 0.5 to 1 MV/cm with a threshold-like behavior.
Keywords :
III-V semiconductors; excitons; gallium arsenide; semiconductor quantum wells; GaAs; carrier multiplication phenomena; electric field amplitude; exciton luminescence intensity; gallium arsenide MQW; intense THz pulse irradiation; intense terahertz pulse irradiation; quantum wells; Electric fields; Excitons; Gallium arsenide; Luminescence; Optical pulses; Radiation effects; Ultrafast optics;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6104913
