DocumentCode
2672742
Title
New insights into the wide ID range channel hot-carrier degradation in high-k based devices
Author
Amat, E. ; Rodríguez, R. ; Nafrí, M. ; Aymerich, X. ; Kauerauf, T. ; Degraeve, R. ; Groeseneken, G.
Author_Institution
Electron. Eng. Dept., Univ. Autonoma de Barcelona (UAB), Bellaterra, Spain
fYear
2009
fDate
26-30 April 2009
Firstpage
1028
Lastpage
1032
Abstract
At low energy range, the Lucky Electron Model does not describe correctly the Channel Hot-Carrier (CHC) degradation for transistors with both SiO2 and high-k dielectric. A new picture to explain the CHC degradation behavior in nMOSFETs based on the dominant role of the gate voltage into the total CHC stress is presented.
Keywords
MOSFET; high-k dielectric thin films; hot carriers; semiconductor device reliability; channel hot-carrier degradation; gate voltage; high-k based device; high-k dielectric transistor; nMOSFET degradation; transistor reliability; Chemicals; Degradation; Electrons; High K dielectric materials; High-K gate dielectrics; Hot carriers; MOSFET circuits; Stress; Temperature distribution; Voltage; high-k; hot-carrier; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173405
Filename
5173405
Link To Document