Title :
Rabi flopping of intersubband transitions in GaAs/AlGaAs MQWs
Author :
Luo, C.W. ; Reimann, Klaus ; Woerner, Michael ; Elsaesser, T. ; Hey, R. ; Ploog, K.H.
Author_Institution :
Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany
Abstract :
Rabi flopping of intersubband transitions in n-type modulation-doped GaAs/AlGaAs multiple quantum wells is directly observed by electro-optic sampling of ultrashort THz transients with large electric-field amplitudes transmitted through the sample.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical effects; gallium arsenide; high-speed optical techniques; infrared spectra; semiconductor quantum wells; submillimetre wave spectra; GaAs-AlGaAs; Rabi flopping; electro-optic sampling; intersubband transitions; multiple quantum wells; ultrashort THz transients; Electrons; Epitaxial layers; Frequency; Gallium arsenide; Nonlinear optics; Optical mixing; Quantum dots; Quantum well devices; Sampling methods; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238387
