Title :
Active Microwave Power Combiner/Divider Using a Dual-Gate MESFET
Abstract :
An active power combiner/divider using a gallium arsenide (GaAs) dual-gate metal semiconductor field-effect transistor (MESFET) is presented herein. This new component is feasible for monolithic microwave integrated circuit (MMIC) fabrication, and provides the advantages of amplification gain,both amplitude and phase adjustability, and reverse isolation.
Keywords :
FETs; Fabrication; Gallium arsenide; MESFET circuits; MMICs; Microwave devices; Phase shifters; Power combiners; Radar antennas; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129951
