DocumentCode
2672867
Title
Active Microwave Power Combiner/Divider Using a Dual-Gate MESFET
Author
Pan, J.J.
fYear
1981
fDate
15-19 June 1981
Firstpage
434
Lastpage
435
Abstract
An active power combiner/divider using a gallium arsenide (GaAs) dual-gate metal semiconductor field-effect transistor (MESFET) is presented herein. This new component is feasible for monolithic microwave integrated circuit (MMIC) fabrication, and provides the advantages of amplification gain,both amplitude and phase adjustability, and reverse isolation.
Keywords
FETs; Fabrication; Gallium arsenide; MESFET circuits; MMICs; Microwave devices; Phase shifters; Power combiners; Radar antennas; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location
Los Angeles, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1981.1129951
Filename
1129951
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