DocumentCode
2672939
Title
Cooled Low Noise GaAs Monolithic Mixers at 110 GHz
Author
Clifton, B.J. ; Alley, G.D. ; Murphy, R.A. ; Piacentini, W.J. ; Mroczkowski, I.H. ; Macropoulos, W.
fYear
1981
fDate
15-19 June 1981
Firstpage
444
Lastpage
446
Abstract
We describe the fabrication and testing of GaAs monolithic integrated circuit mixers which have liquid nitrogen double sideband (DSB) mixer noise temperatures in the range 50-200 K and conversion losses of 4.0-5.0 dB.
Keywords
Ceramics; Coupling circuits; Gallium arsenide; Metallization; Monolithic integrated circuits; Ohmic contacts; Optical surface waves; Schottky barriers; Schottky diodes; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location
Los Angeles, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1981.1129955
Filename
1129955
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