DocumentCode
2672954
Title
A 4GHz Low Noise GaAsFET Amplifier
Author
Li Hao-mo
fYear
1981
fDate
15-19 June 1981
Firstpage
447
Lastpage
449
Abstract
A 4GHz low noise GaAsFET amplifier has been designed and fabricated. Time-delay protection circuit and input circuit without separation DC element has been used. The performence of two stages 4,0-4,5 GHz amplifier is N/sub F/ 2 db, G/sub a/ 24 db.
Keywords
Circuit noise; Circuit testing; Impedance; Low-frequency noise; Low-noise amplifiers; Microwave devices; Noise figure; Protection; Pulse amplifiers; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location
Los Angeles, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1981.1129956
Filename
1129956
Link To Document