DocumentCode :
2672954
Title :
A 4GHz Low Noise GaAsFET Amplifier
Author :
Li Hao-mo
fYear :
1981
fDate :
15-19 June 1981
Firstpage :
447
Lastpage :
449
Abstract :
A 4GHz low noise GaAsFET amplifier has been designed and fabricated. Time-delay protection circuit and input circuit without separation DC element has been used. The performence of two stages 4,0-4,5 GHz amplifier is N/sub F/ 2 db, G/sub a/ 24 db.
Keywords :
Circuit noise; Circuit testing; Impedance; Low-frequency noise; Low-noise amplifiers; Microwave devices; Noise figure; Protection; Pulse amplifiers; Semiconductor device noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1981.1129956
Filename :
1129956
Link To Document :
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