DocumentCode :
2672984
Title :
Modeling of Evaporation of Thin Films Using DOE
Author :
Mach, Pavel ; Kocian, Miroslav
Author_Institution :
Czech Tech. Univ. in Prague, Prague
fYear :
2006
fDate :
10-14 May 2006
Firstpage :
273
Lastpage :
277
Abstract :
Evaporation of thin films is widely spread technology. The goal of the work has been to optimize a process of fabrication of thin resistive Ni films. Mathematical models for calculation of thickness and resistance of the films have been created. A method of design of experiments has been used for design of the models. Three types of models have been designed and tested: a linear model, a combined one and a short combined one. First the models have been verified using an F-test. It has been found that a linear model is not satisfactory, therefore it has been rejected. Subsequently remaining two models have been verified by complementary experiments, when calculated values and values measured on newly fabricated films have been compared. It has been found an excellent conformity among calculated and measured values (plusmn 3%). Then the optimum fabrication conditions have been found by optimization of the models.
Keywords :
design of experiments; nickel; surface treatment; thin film resistors; vacuum deposition; DOE; design of experiments; linear model; mathematical models; optimum fabrication conditions; short combined one model; thin films evaporation; thin films resistance; thin films thickness; thin resistive films; Chemical vapor deposition; Electrical resistance measurement; Fabrication; Mathematical model; Resistors; Sputtering; Substrates; Thickness measurement; Transistors; US Department of Energy; DOE; evaporation; statistical testing; thin film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Technology, 2006. ISSE '06. 29th International Spring Seminar on
Conference_Location :
St. Marienthal
Print_ISBN :
1-4244-0551-3
Electronic_ISBN :
1-4244-0551-3
Type :
conf
DOI :
10.1109/ISSE.2006.365401
Filename :
4216041
Link To Document :
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