Title :
Relevance of P-Channel MOSFETs in Current and Future Applications
Author :
Diaz-Valdivieso, Aranzazu ; Ahlers, Dirk ; Deboy, Gerald
Author_Institution :
Infineon Technologies AG, Munich, Germany.
fDate :
Aug. 30 2006-Sept. 1 2006
Abstract :
P-Channel MOSFETs are well known for their physical limitations compared to the N-Channel MOSFETs. Hole mobility is around three times smaller than electron mobility. Therefore a larger active area is necessary to achieve the same RDS(ON), thus making P-Channel devices more expensive. But they are equally known for their simplicity of usage. For applications in which a high side switch is needed, P-Channel MOSFET are the easiest option for their simple driver IC architecture and simple external circuitry, reducing the number of elements in the system. In this paper we will analyze the current and future usage of P-Channel MOSFETs.
Keywords :
Battery management systems; Buck converters; Chemistry; Energy management; MOSFETs; Power system management; Switches; Switching circuits; Switching frequency; Voltage;
Conference_Titel :
Power Electronics and Motion Control Conference, 2006. EPE-PEMC 2006. 12th International
Conference_Location :
Portoroz
Print_ISBN :
1-4244-0121-6
DOI :
10.1109/EPEPEMC.2006.4778697