DocumentCode
2673286
Title
Extraordinary THz transmission in ring apertures
Author
Shu, Jie ; Qiu, Ciyuan ; Astley, Victoria ; Nickel, Daniel ; Mittleman, Daniel M. ; Xu, Qianfan
Author_Institution
ECE Dept., Rice Univ., Houston, TX, USA
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
We demonstrated extraordinary THz transmission through ring apertures on a metal film. Transmission of 60% was obtained with an aperture-to-area ratio of only 1.4%. We show that the high transmission can be suppressed by over 18 dB with a thin layer of free carriers in the silicon substrate underneath the metal film. This result suggests that CMOS-compatible terahertz switch can be built by controlling the carrier density near the aperture.
Keywords
CMOS integrated circuits; carrier density; field effect transistor switches; metallic thin films; optical switches; terahertz wave devices; CMOS-compatible terahertz switch; THz transmission; aperture-to-area ratio; free carriers thin layer; metal film; ring aperture; silicon substrate; Apertures; Metals; Optical switches; Power measurement; Power transmission; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6104945
Filename
6104945
Link To Document