• DocumentCode
    2673565
  • Title

    Depth measurement of Through-Silicon Via using THz Time-Domain Spectroscopy

  • Author

    Nakanishi, H. ; Takeya, K. ; Kawayama, I. ; Murakami, H. ; Tonouchi, M.

  • Author_Institution
    Dainippon Screen Manuf., Kyoto, Japan
  • fYear
    2011
  • fDate
    2-7 Oct. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We propose a non-destructive method to measure a depth of Through-Silicon Via (TSV) using Terahertz Time-Domain Spectroscopy (THz-TDS). TSV with high aspect ratio could be measured from the phase-shift of transmitted THz pulse. We also succeeded in imaging the difference between two areas corresponding to TSVs and unprocessed Si wafer.
  • Keywords
    silicon; spatial variables measurement; terahertz wave imaging; three-dimensional integrated circuits; time-domain analysis; Si; THz pulse; THz time-domain spectroscopy; depth measurement; nondestructive method; phase shift; silicon wafer; terahertz time-domain spectroscopy; through-silicon via; Imaging; Semiconductor device measurement; Semiconductor device modeling; Shape; Silicon; Through-silicon vias; Time domain analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
  • Conference_Location
    Houston, TX
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4577-0510-6
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/irmmw-THz.2011.6104962
  • Filename
    6104962
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2673565