Title :
Depth measurement of Through-Silicon Via using THz Time-Domain Spectroscopy
Author :
Nakanishi, H. ; Takeya, K. ; Kawayama, I. ; Murakami, H. ; Tonouchi, M.
Author_Institution :
Dainippon Screen Manuf., Kyoto, Japan
Abstract :
We propose a non-destructive method to measure a depth of Through-Silicon Via (TSV) using Terahertz Time-Domain Spectroscopy (THz-TDS). TSV with high aspect ratio could be measured from the phase-shift of transmitted THz pulse. We also succeeded in imaging the difference between two areas corresponding to TSVs and unprocessed Si wafer.
Keywords :
silicon; spatial variables measurement; terahertz wave imaging; three-dimensional integrated circuits; time-domain analysis; Si; THz pulse; THz time-domain spectroscopy; depth measurement; nondestructive method; phase shift; silicon wafer; terahertz time-domain spectroscopy; through-silicon via; Imaging; Semiconductor device measurement; Semiconductor device modeling; Shape; Silicon; Through-silicon vias; Time domain analysis;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6104962
