DocumentCode :
2673725
Title :
Future T&D Technology
Author :
Oates, Colin ; Bassett, Roger
Author_Institution :
AREVA T&D Technology Centre, Stafford, UK
fYear :
2006
fDate :
Aug. 30 2006-Sept. 1 2006
Firstpage :
2144
Lastpage :
2148
Abstract :
Power Electronics has evolved over the past 20 years to be the main method of power conversion in terms of equipment volume, efficiency and cost. In power transmission and distribution systems power electronics does not compare in efficiency and cost and only provides support where conventional technology is not incapable of performing the task. With the promise of Silicon Carbide (SiC) based IGBTs rated at 10kV to be realised within the next year the paper examines what effect this might have on the role of Power Electronics within Power Transmission. In particular values of efficiency, weight and size are developed for 300MW PWM based HVDC converter equipment operating with both a 50Hz transformer and at 1kHz and 20kHz and concludes that with Silicon Carbide devices the cost of VSC-HVDC stations will reduce by about 30%. Changing to high frequency conversion using frequencies of up to 20kHz will result in comparable efficiencies and volumes with Si based VSC-HVDC stations, however the overall cost will increase by about 30%.
Keywords :
Costs; Frequency conversion; HVDC transmission; Insulated gate bipolar transistors; Power conversion; Power electronics; Power transmission; Pulse width modulation; Pulse width modulation converters; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Motion Control Conference, 2006. EPE-PEMC 2006. 12th International
Conference_Location :
Portoroz
Print_ISBN :
1-4244-0121-6
Type :
conf
DOI :
10.1109/EPEPEMC.2006.4778725
Filename :
4778725
Link To Document :
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