• DocumentCode
    2673864
  • Title

    A novel integrated decoupling capacitor for MCM-L technology

  • Author

    Chahal, Premjeet ; Tummala, Rao R. ; Allen, Mark G. ; Swaminathan, Madhavan

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    1996
  • fDate
    28-31 May 1996
  • Firstpage
    125
  • Lastpage
    132
  • Abstract
    This paper discuses the design, materials, fabrication and measurements of a novel integrated decoupling capacitor for MCM-L-based substrates. Based on modeling using the SLA Roadmap, it has been estimated that 13-72 nF/cm2 of specific decoupling capacitance will be required for the next decade. The capacitor in this paper addresses this need. The fabrication of the capacitor has been achieved using filled polymer materials in thin film form, with via diameters of 100 um and below, through photodefinable processes. Dielectric constant as high as 65 with loss tangent below 0.05 and specific capacitance of 22 nF/cm2 have been achieved. The scattering parameters were measured up to 20 GHz using a network analyzer for various capacitor structures to study input impedance and scaling of the devices. Input impedance of the capacitor is found to be low in the GHz range. The polymer-filled materials and capacitor structures are also scalable to a variety of sizes and values
  • Keywords
    S-parameters; composite materials; electric impedance; filled polymers; multichip modules; polymer films; thin film capacitors; 20 GHz; MCM-L technology; SLA Roadmap; fabrication; filled polymer materials; input impedance; integrated decoupling capacitor; modeling; photodefinable processes; scaling; scattering parameters; thin film form; Capacitance; Capacitors; Dielectric losses; Dielectric materials; Dielectric thin films; Fabrication; High-K gate dielectrics; Impedance; Polymer films; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1996. Proceedings., 46th
  • Conference_Location
    Orlando, FL
  • ISSN
    0569-5503
  • Print_ISBN
    0-7803-3286-5
  • Type

    conf

  • DOI
    10.1109/ECTC.1996.517383
  • Filename
    517383