Title :
Comparison of GaAs and silicon synchronous rectifiers in a 3.3 V out, 50 W DC-DC converter
Author :
Niemela, Van A. ; Bowman, Wayne C.
Author_Institution :
Lucent Technol., Bell Labs., Mesquite, TX, USA
Abstract :
An experimental GaAs vertical FET is compared to a state-of-the-art silicon MOSFET for low-voltage synchronous rectification. Laboratory data show GaAs to perform significantly better, and a normalized cost analysis reveals that the GaAs VFET can potentially offer higher performance at lower cost than silicon
Keywords :
AC-DC power convertors; DC-DC power convertors; III-V semiconductors; economics; elemental semiconductors; field effect transistor switches; gallium arsenide; power MOSFET; power field effect transistors; power semiconductor switches; rectifying circuits; semiconductor device manufacture; semiconductor device testing; silicon; 3.3 V; 50 W; DC-DC power converter; GaAs; LV synchronous rectification; MOSFET; Si; VFET; cost analysis; performance tests; state-of-the-art; synchronous rectifiers; vertical FET; Capacitance; Circuits; Costs; DC-DC power converters; Diodes; FETs; Gallium arsenide; Rectifiers; Silicon; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548682
