Title :
Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection
Author :
Zhang, L.Q. ; Alimi, Y. ; Balocco, C. ; Zhao, H. ; Westlund, A. ; Moschetti, G. ; Nilsson, P. -Å ; Grahn, J. ; Song, A.M.
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK
Abstract :
We report on the fabrication of unipolar nanodiodes into an InAs/AlxGa1-xSb quantum-well heterostructure for room temperature microwave detection up to 110 GHz. Electron-beam lithography was combined with both dry- and wet-etching, and we explored the differences in the electric and detection parameters with the two methods.
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; etching; gallium compounds; indium compounds; microwave detectors; millimetre wave diodes; nanoelectronics; quantum well devices; InAs-AlxGa1-xSb; detection parameters; dry etching; electric parameters; electron beam lithography; quantum well heterostructure; room temperature microwave detection; temperature 293 K to 298 K; unipolar nanodiode fabrication; wet etching; Etching; Fabrication; Microwave devices; Substrates; Temperature; Temperature measurement;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6104983
