Title :
A wavelet based method for modeling and simulation of a SiC BJT
Author :
Xiuting Lv ; Pingan Tan
Author_Institution :
Sch. of Inf. Eng., Xiangtan Univ., Xiangtan, China
Abstract :
This paper focuses on the modeling and simulation of silicon carbide(SiC) bipolar junction transistor(BJT). SiC BJT is modeled in MATLAB using internal dynamical equation, and the Haar wavelet method is used to solve the ambipolar diffusion equation (ADE). The simulation results of switching waveforms of SiC BJT are given, which verify the validity of this method.
Keywords :
Haar transforms; bipolar transistors; diffusion; mathematics computing; semiconductor device models; silicon compounds; wavelet transforms; wide band gap semiconductors; Haar wavelet method; MATLAB; SiC; SiC BJT; ambipolar diffusion equation; bipolar junction transistor; internal dynamical equation; switching waveforms; wavelet based method; Educational institutions; Equations; Junctions; Mathematical model; Silicon carbide; Simulation; Wavelet transforms; Haar wavelet; SiC BJT; modeling; simulation;
Conference_Titel :
Electronics and Application Conference and Exposition (PEAC), 2014 International
Conference_Location :
Shanghai
DOI :
10.1109/PEAC.2014.7038022
