DocumentCode :
2673966
Title :
Spiral InSb photodetectors
Author :
Vasilyev, Yu B. ; Terent´ev, Ya.V. ; Usikova, A.A. ; Il´inskaya, N.D.
Author_Institution :
Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fYear :
2011
fDate :
2-7 Oct. 2011
Firstpage :
1
Lastpage :
1
Abstract :
A new design of InSb photodetectors in the form of planar spirals is suggested and studied. This design enables fabrication of high-sensitive photodetectors with the responsivity peaks corresponding both to the interband and intraband transitions of electrons.
Keywords :
indium compounds; photodetectors; semiconductor devices; semiconductor materials; InSb; electron interband transition; electron intraband transition; high-sensitive photodetectors fabrication; planar spiral; responsivity peak; spiral InSb photodetector; Detectors; Magnetic fields; Molecular beam epitaxial growth; Photodetectors; Sensitivity; Spirals; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
ISSN :
2162-2027
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/irmmw-THz.2011.6104987
Filename :
6104987
Link To Document :
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