• DocumentCode
    2673966
  • Title

    Spiral InSb photodetectors

  • Author

    Vasilyev, Yu B. ; Terent´ev, Ya.V. ; Usikova, A.A. ; Il´inskaya, N.D.

  • Author_Institution
    Ioffe Phys. Tech. Inst., St. Petersburg, Russia
  • fYear
    2011
  • fDate
    2-7 Oct. 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    A new design of InSb photodetectors in the form of planar spirals is suggested and studied. This design enables fabrication of high-sensitive photodetectors with the responsivity peaks corresponding both to the interband and intraband transitions of electrons.
  • Keywords
    indium compounds; photodetectors; semiconductor devices; semiconductor materials; InSb; electron interband transition; electron intraband transition; high-sensitive photodetectors fabrication; planar spiral; responsivity peak; spiral InSb photodetector; Detectors; Magnetic fields; Molecular beam epitaxial growth; Photodetectors; Sensitivity; Spirals; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
  • Conference_Location
    Houston, TX
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4577-0510-6
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/irmmw-THz.2011.6104987
  • Filename
    6104987
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2673966