Title :
Simulation analysis of active clamping circuit with status feedback for HV-IGBTs
Author :
Ye Jiang ; Ting Lu ; Liqiang Yuan ; Zhengming Zhao ; Fanbo He
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
Based on the existing voltage balancing scheme for two series HV-IGBTs (High voltage insulated gate bipolar transistors) with active clamping and status feedback, this paper focuses on the characteristics of IGBT with active clamping circuit. First, the previous series IGBT model is improved according to the experiment results in order to give accurate feedback signal in the active clamping sub-circuit. Then the effect of the load current, the gate drive delay and clamping threshold on feedback signal is studied by simulation. According to the analysis above, the voltage balancing scheme with status feedback is applied to multiple series IGBTs and is proved feasible by simulation.
Keywords :
active networks; circuit feedback; insulated gate bipolar transistors; semiconductor device models; HV-IGBT; active clamping circuit; clamping threshold; feedback signal; gate drive delay; high voltage insulated gate bipolar transistors; load current; simulation analysis; status feedback; voltage balancing scheme; Clamps; Delays; Insulated gate bipolar transistors; Integrated circuit modeling; Load modeling; Logic gates; Threshold voltage; HV-IGBT; series connection; simulation; status feedback; voltage balancing;
Conference_Titel :
Electronics and Application Conference and Exposition (PEAC), 2014 International
Conference_Location :
Shanghai
DOI :
10.1109/PEAC.2014.7038026
