Optoelectronic Class AB Microwave Power Amplifier

Author

Huang, Chih-Jung ; O´Connell, Robert M.

Author_Institution

Dept. of Electr. & Comput. Eng., Missouri Univ., Columbia, MO

fYear

2006

fDate

14-18 May 2006

Firstpage

146

Lastpage

149

Abstract

Recent power amplifiers for transmit/receive (TR) modules have been configured in the Class AB or push-pull mode with a theoretical efficiency of 78.5% and an operational efficiency of only 20% at X-band (8-12.5 GHz) frequencies. In this paper, we present results of a simulation study of a new scheme of power amplifier, in particular, an optoelectronic (OE) Class AB push-pull microwave power amplifier (MPA). With this amplifier, high circuit efficiency and reasonable output power can be achieved at X-band by utilizing a pair of novel photoconductive semiconductor switches (PCSSs) based on intrinsic GaAs instead of the traditional microwave transistors

Keywords

gallium arsenide; microwave power amplifiers; photoconducting switches; GaAs; OE class AB MPA; PCSS; TR module; intrinsic GaAs; microwave power amplifier; optoelectronics; photoconductive semiconductor switch; push-pull mode; transmit-receive module; Circuit simulation; Frequency; High power amplifiers; Microwave amplifiers; Microwave circuits; Operational amplifiers; Photoconducting devices; Power amplifiers; Power generation; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator Symposium, 2006. Conference Record of the 2006 Twenty-Seventh International

Conference_Location

Arlington, VA

Print_ISBN

1-4244-0018-X

Electronic_ISBN

1-4244-0019-8

Type

conf

DOI

10.1109/MODSYM.2006.365203

Filename

4216155