Title :
Optoelectronic Class AB Microwave Power Amplifier
Author :
Huang, Chih-Jung ; O´Connell, Robert M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Missouri Univ., Columbia, MO
Abstract :
Recent power amplifiers for transmit/receive (TR) modules have been configured in the Class AB or push-pull mode with a theoretical efficiency of 78.5% and an operational efficiency of only 20% at X-band (8-12.5 GHz) frequencies. In this paper, we present results of a simulation study of a new scheme of power amplifier, in particular, an optoelectronic (OE) Class AB push-pull microwave power amplifier (MPA). With this amplifier, high circuit efficiency and reasonable output power can be achieved at X-band by utilizing a pair of novel photoconductive semiconductor switches (PCSSs) based on intrinsic GaAs instead of the traditional microwave transistors
Keywords :
gallium arsenide; microwave power amplifiers; photoconducting switches; GaAs; OE class AB MPA; PCSS; TR module; intrinsic GaAs; microwave power amplifier; optoelectronics; photoconductive semiconductor switch; push-pull mode; transmit-receive module; Circuit simulation; Frequency; High power amplifiers; Microwave amplifiers; Microwave circuits; Operational amplifiers; Photoconducting devices; Power amplifiers; Power generation; Semiconductor optical amplifiers;
Conference_Titel :
Power Modulator Symposium, 2006. Conference Record of the 2006 Twenty-Seventh International
Conference_Location :
Arlington, VA
Print_ISBN :
1-4244-0018-X
Electronic_ISBN :
1-4244-0019-8
DOI :
10.1109/MODSYM.2006.365203
