Title :
Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications
Author :
Saeedkia, D. ; Kostakis, I. ; Missous, M.
Author_Institution :
T-Era Consulting, Waterloo, ON, Canada
Abstract :
Carrier dynamic for Be doped multi-quantum-well InGaAs-InAlAs material systems are measured using an infrared pump-probe measurement system at 1550 nm wavelength range. The carrier life-time for as-grown materials and for materials with two different levels of Be doping annealed at different temperatures are measured and the results are compared. Subpicosecond carrier lifetimes are obtained.
Keywords :
III-V semiconductors; aluminium compounds; annealing; beryllium; carrier lifetime; doping profiles; gallium arsenide; high-speed optical techniques; indium compounds; optical pumping; semiconductor doping; semiconductor quantum wells; InGaAs-InAlAs:Be; annealing; carrier dynamic property; doping levels; infrared pump-probe measurement; multiquantum-well material; subpicosecond carrier lifetimes; wavelength 1550 nm; Annealing; Doping; Materials; Measurement by laser beam; Probes; Temperature measurement; Wavelength measurement;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6105007
