High sensitivity and low power skin sensor implementation and performance comparison using CMOS and CNFET

Author

Lee, Ho Joon ; Nan, Haiqing ; Kim, Kyung Ki ; Choi, Ken

Author_Institution

Dept. of Electr. Eng., Illinois Inst. of Technol., Chicago, IL, USA

fYear

2011

fDate

15-17 May 2011

Firstpage

1

Lastpage

5

Abstract

Skin sensor is the most critical part for controlling robot sensing behavior. In this paper, we provide circuit implementation and simulation for sensing the pressure in the skin sensor using CMOS and CNFET at 32nm technology node. The proposed scheme can be used as an active matrix like memory element in the skin sensor and it is demonstrated by showing the output image according to the skin sensor´s pressure location using Matlab implementation. The circuits are compared with CMOS and CNFET (Carbon Nanotube FET) at different supply voltages to show the feasibility of the scheme. Also, low-leakage circuit technique is applied to the proposed sensing circuit.

Keywords

CMOS integrated circuits; carbon nanotubes; computerised instrumentation; pressure sensors; robots; tactile sensors; CMOS; CNFET; Matlab implementation; active matrix; carbon nanotube FET; high sensitivity skin sensor; low power skin sensor; low-leakage circuit technique; memory element; pressure location; pressure sensing; robot sensing behavior control; CMOS integrated circuits; CNTFETs; Pixel; Robot sensing systems; Skin; CMOS; CNFET; Low power; NWFET; Skin sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electro/Information Technology (EIT), 2011 IEEE International Conference on

Conference_Location

Mankato, MN

ISSN

2154-0357

Print_ISBN

978-1-61284-465-7

Type

conf

DOI

10.1109/EIT.2011.5978630

Filename

5978630