DocumentCode :
2674359
Title :
High sensitivity and low power skin sensor implementation and performance comparison using CMOS and CNFET
Author :
Lee, Ho Joon ; Nan, Haiqing ; Kim, Kyung Ki ; Choi, Ken
Author_Institution :
Dept. of Electr. Eng., Illinois Inst. of Technol., Chicago, IL, USA
fYear :
2011
fDate :
15-17 May 2011
Firstpage :
1
Lastpage :
5
Abstract :
Skin sensor is the most critical part for controlling robot sensing behavior. In this paper, we provide circuit implementation and simulation for sensing the pressure in the skin sensor using CMOS and CNFET at 32nm technology node. The proposed scheme can be used as an active matrix like memory element in the skin sensor and it is demonstrated by showing the output image according to the skin sensor´s pressure location using Matlab implementation. The circuits are compared with CMOS and CNFET (Carbon Nanotube FET) at different supply voltages to show the feasibility of the scheme. Also, low-leakage circuit technique is applied to the proposed sensing circuit.
Keywords :
CMOS integrated circuits; carbon nanotubes; computerised instrumentation; pressure sensors; robots; tactile sensors; CMOS; CNFET; Matlab implementation; active matrix; carbon nanotube FET; high sensitivity skin sensor; low power skin sensor; low-leakage circuit technique; memory element; pressure location; pressure sensing; robot sensing behavior control; CMOS integrated circuits; CNTFETs; Pixel; Robot sensing systems; Skin; CMOS; CNFET; Low power; NWFET; Skin sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electro/Information Technology (EIT), 2011 IEEE International Conference on
Conference_Location :
Mankato, MN
ISSN :
2154-0357
Print_ISBN :
978-1-61284-465-7
Type :
conf
DOI :
10.1109/EIT.2011.5978630
Filename :
5978630
Link To Document :
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