DocumentCode :
267439
Title :
Thermal reliability analysis of non-gate dielectric film in IEC-GCT
Author :
Ruliang Zhang ; Yong Gao ; Cailin Wang ; Pengfei Yang
Author_Institution :
Dept. of Electron. Eng., Xi´an Univ. of Technol., Xi´an, China
fYear :
2014
fDate :
5-8 Nov. 2014
Firstpage :
1378
Lastpage :
1381
Abstract :
A new concept, non-gate dielectric film (NGD film) is proposed, to describe the special role of anode insulator film on a recently reported power semiconductor, IEC-GCT. Thermal reliability analysis, including thermal stress and heat conductivity, show that aluminum nitride, polycrystalline silicon and borosilicate glass are more suitable as anode non-gate dielectric film than SiO2. Thermal stress and temperature distribution between the NGD film and multi-layer metallization electrodes or silicon wafer, has been numerically simulated with finite element analysis tools ANSYS. The results agree with the theoretical analysis. Consideration with film manufacture cost and process match with IEC-GCT, polycrystalline silicon and borosilicate glass are proposed as the optimal non-gate dielectric films.
Keywords :
aluminium compounds; anodes; borosilicate glasses; dielectric thin films; elemental semiconductors; finite element analysis; insulating thin films; semiconductor device metallisation; semiconductor device models; semiconductor device reliability; silicon; silicon compounds; thermal stresses; thyristors; wide band gap semiconductors; ANSYS; AlN; BSG; IEC-GCT power semiconductor; Si; Si3N4; SiO2; aluminum nitride; anode insulator film; anode nongate dielectric film; borosilicate glass; finite element analysis; heat conductivity; injection efficiency controlled gate commutated thyristor; multilayer metallization electrodes; polycrystalline silicon; silicon wafer; temperature distribution; thermal reliability analysis; thermal stress; Anodes; Dielectric films; III-V semiconductor materials; Silicon; Stress; Thermal stresses; gate-commutated thyristor; non-gate dielectric film; power semiconductor device; thermal stability analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Application Conference and Exposition (PEAC), 2014 International
Conference_Location :
Shanghai
Type :
conf
DOI :
10.1109/PEAC.2014.7038065
Filename :
7038065
Link To Document :
بازگشت